Single Event Upset Testing

Abstract

This report presents the results of an experimental program to characterize single event upset phenomena in selected bipolar memory devices irradiated with relativistic heavy ions. The principle objective was to determine the multibit upset rate at normal and parallel beam incidence angles. The impetus for this objective is that multibit errors are not generally detectable by the simple Hamming codes currently used on spacecraft. Multibit errors significantly reduce spacecraft reliability in initiating spurious commands. It was found in this program that the multibit error cross section is equal to or greater than the projected area of the depletion regions for parallel and for normal to 60 degree incidence beams.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1988
Accession Number
ADA237214

Entities

People

  • Dennis L. Oberg
  • Jerry L. Wert
  • Paul R. Measel
  • Tommy L. Criswell

Organizations

  • Boeing

Tags

Communities of Interest

  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Communication Satellites
  • Cosmic Rays
  • Databases
  • Dosimetry
  • Electron Emission
  • Electron Energy
  • Electrons
  • Energy
  • Failure Mode And Effect Analysis
  • Galactic Cosmic Rays
  • High Energy
  • Ion Beams
  • Ionization
  • Ionization Chambers
  • Measurement
  • Space Systems
  • Spacecraft

Fields of Study

  • Physics

Readers

  • Solar Physics
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Space