Failure Mechanisms on GaAs Integrated Circuits: Electromigration on GaAs

Abstract

The objective of this program was to investigate two aspects of electromigration on GaAs devices: (1) the rate of electromigration of typical metallizations on GaAs, and (2) the occurrence of electromigration assisted interdiffusion of the gate metal and the GaAs in GaAs FETs. A life test was conducted, and the rate of electromigration was found to be influenced by the type of barrier metallization used. It was found that electromigration is no worse on GaAs than on silicon. It was found that interdiffusion of the gate metal into the GaAs was not significant at the test conditions used during the life test.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1991
Accession Number
ADA237352

Entities

People

  • David Widay
  • Donald J. La Combe
  • Earl L. Parks

Organizations

  • General Electric

Tags

DTIC Thesaurus Topics

  • Ceramic Materials
  • Electronics
  • Electronics Laboratories
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Grain Size
  • Integrated Circuits
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Reliability
  • Resistance
  • Stress Tests
  • Test And Evaluation
  • Test Equipment
  • Thermal Conductivity

Fields of Study

  • Engineering
  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Structural Health Monitoring of Composite Structures.
  • Thin Film Deposition Science.