Growth, Characterization and Device Development in Monocrystalline Diamond Films
Abstract
Carbon has been implanted into monocrystalline (100) copper substrates. Owing to the low solubility of C in Cu, it was easily diffused to a clean Cu surface at 550 C in the form of graphite rather than the desired diamond, as shown by Auger electron spectroscopy measurements. Laser reflection interferometry has proven to be a useful technique in the study of diamond growth processes. Nucleation and growth rates were monitored in real time. The problem of surface roughness of the polycrystalline films was surmounted by growing diamond on a thin amorphous C or diamond-like film. The microwave performance of p-type diamond MESFETs operating at 10 GHz has been investigated. The moderate activation energy of the p-type dopant of B may force operation at elevated temperature. However this may result in a significantly degraded RF performance, since holes in diamond demonstrate a T to the -2.8 power temperature dependence.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1991
- Accession Number
- ADA237463
Entities
People
- Jeffrey T Glass
- Klaus J. Bachmann
- R. J. Trew
- Robert F Davis
Organizations
- North Carolina State University