Relative Stabilities of Tetramethyl Orthosilicate and Tetraethyl Orthosilicate in the Gas Phase

Abstract

The stabilities of Si(OCH3)4 and Si(OC2H5)4 have been studied pyrolytically using highly dilute mixtures near atmospheric pressure conditions. FTIR spectrometric analyses of the disappearance of the reactants and the formation of various major stable products allow us to qualitatively account for the global difference in the measured overall first-order decay constants. The deposition of Silicon dioxide as an insulating film is an important part of microelectronic fabrication process. For the SiO2 film preparation, there have been attempts to replace the traditional dry oxidation and silane oxidation processes by silicon alkoxide CVD (chemical vapor deposition).

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Document Details

Document Type
Technical Report
Publication Date
Feb 26, 1991
Accession Number
ADA237697

Entities

People

  • James Breslin
  • Jason C. Chu
  • Lin Ming-chang
  • N. S. Wang

Organizations

  • Emory University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Barometric Pressure
  • Chemical Reaction Properties
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Chemistry
  • Decomposition
  • Films
  • Heat Of Activation
  • Materials
  • Military Research
  • Nesosilicates
  • Oxidation
  • Procurement
  • Security
  • Surface Reactions
  • Vapor Deposition

Fields of Study

  • Chemistry

Readers

  • Organic Chemistry
  • Theoretical Analysis.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene