Defect Reductions in Epitaxial Growth Using Superlattice Buffer Layers
Abstract
The final report is based on the thesis of two Ph.D. students working in the area of defect reduction using strained layer superlattices. A variety of attempts to reduce the defects density in GaAs epitaxial films grown on Si substrates using annealing, InGaAs-GaAsP strained-layer superlattices, strained- layer superlattices combined with annealing, and the selective etching are presented. Both conventional furnace annealing/slow cooling and rapid thermal annealing were effective to eliminate microtwins and stacking faults. However, the conventional furnace annealing/slow cooling showed more promising results in terms of dislocations reduction. This conventional furnace annealing reduces dislocation density to about high 10(7) cm(-2).
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1990
- Accession Number
- ADA237710
Entities
People
- N. El-masry
- Salah Bedair
Organizations
- North Carolina State University