Post-Nucleation Heteroepitaxy in Poorly Lattice Matched Systems
Abstract
We have demonstrated a new mechanism for obtaining heteroepitaxial films, Epitaxial Grain Growth (EGG), which can lead to higher quality ultrathin epitaxial films than can be obtained by other techniques in systems with highly mismatched lattices. We have experimentally characterized this process in model materials systems and have shown that the observed orientation selectivity as well as the observed kinetic dependence or film thickness are consistent with the proposed surface- and interface-energy-driven mechanism. We have developed a computer simulation for EGG which is allowing us to determine which materials properties and processing conditions will lead to higher orientation selectivity and further reduced defect densities.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1990
- Accession Number
- ADA237783
Entities
People
- Carl V. Thompson
Organizations
- Massachusetts Institute of Technology