Vibrational, Mechanica, and Thermal Properties of III-V Semiconductors

Abstract

Theories of the mechanical, vibrational, and electronic properties of III-V semiconductors have been developed and applied to (1) understanding the physics underlying the II-VI doping problem and suggesting band-gap engineering schemes for circumventing the problem; (2) making predictions of how the character of deep and shallow impurities can be different in superlattices from in bulk materials (3) understanding how surfaces of zincblende and wurtzite semiconductors relax, and how this relaxation depends on the ionicity of the semiconductor: (4) obtaining better insight into the properties of semiconducting alloys, both electronically and vibrationally, with attention paid to how ordering phenomena in these alloys affects their properties.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 20, 1991
Accession Number
ADA237785

Entities

People

  • John Dow

Organizations

  • University of Notre Dame

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Bulk Materials
  • Chemical Compounds
  • Compound Semiconductors
  • Crystal Structure
  • Dynamics
  • Electronics
  • Energy Bands
  • Engineering
  • Materials
  • Materials Science
  • Molecular Dynamics
  • Semiconductors
  • Solid State Physics
  • Spectra
  • Thermal Properties

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene