In-Situ Diffraction and Imaging Studies of Heteroepitaxial Growth of Semi-Conductors

Abstract

Our work emphasizes in-situ characterization of the initial stages of heteroepitaxial growth of semiconductors and ultrathin film silicides using advanced instrumentation and techniques, including high resolution reflection high energy electron diffraction (RHEED), a UHV scanning electron microscope with micro-probe RHEED and a UHV scanning transmission electron microscope with micro-probe RHEED and a UHV scanning transmission electron microscope (UHV-STEM). Systems of interest include vicinal Si(100), germanium on silicon, and ultrathin film silicides. Specific instrument and technique developments include: Demonstration that Auger lineshapes can be used to separate coexisting silicide phases in a partially reacted ultrathin film; Demonstration that quasi- kinematic RHEED intensity calculations can be used to identify epitaxial structures; Imaging of single atomic height steps with STEM; Visualization of submonolayers of germanium and various metals using biased secondary electron imaging; Auger imaging at the highest spatial resolution obtained anywhere.

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Document Details

Document Type
Technical Report
Publication Date
Oct 17, 1990
Accession Number
ADA237786

Entities

People

  • John A. Venables
  • Peter A. Bennett

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Compound Semiconductors
  • Detectors
  • Diffraction
  • Electron Diffraction
  • Electron Microscopes
  • Electron Microscopy
  • Electron Spectroscopy
  • Electrons
  • Energy
  • Low Temperature
  • Microscopes
  • Phase Transformations
  • Semiconductors
  • Thin Films
  • Transitions

Fields of Study

  • Physics

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene