Laser Probing of the Kinetics and Dynamics of III - V Semiconductor Growth

Abstract

Work is carried out on the dynamics of Ga, In, and As scattering, sticking, and desorption from silicon single crystals using laser induced fluorescence probing of the Ga and In atoms and As dimer gas phase species. Desorption kinetics are used to probe the InAs and GaAs heterostructures on silicon and the islanding behavior that occurs for the mixed systems. It is observed that islands form readily when In or Ga are grown on a prelayer of As on Si(100). State-resolved detection of As2 species is demonstrated by laser- induced fluorescence probing for the first time. Laser multiphoton ionization detection of the III-V semiconductor species is also demonstrated. A technique is being developed to measure surface migration rates of epitaxial species by using a two laser, desorption and detection scheme.

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Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1991
Accession Number
ADA237795

Entities

People

  • Stephen R. Leone

Organizations

  • JILA

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Classification
  • Detection
  • Dynamics
  • Electron Spectroscopy
  • Epitaxial Growth
  • Fluorescence
  • Kinetics
  • Laser Induced Fluorescence
  • Lasers
  • Mass Spectrometers
  • Security
  • Semiconductors
  • Spectrometry

Readers

  • Molecular Photonics/Laser Physics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics