The Growth of Ultrathin Epitaxial Intermetallic Films
Abstract
The growth of iron aluminide and NiAl intermetallic compounds on III-V substrates has been studied using reflection high-energy electron diffraction (RHEED), transmission electron diffraction (TEM), and selected area electron channeling patterns (SAECP). Procedures for the growth of both of these intermetallics with layer-by-layer control were developed. The quality of the films on indium phosphides (100) substrates exceeds those grown on gallium arsenides (100) substrates due to the lower lattice mismatch. The films are stable to at least 820K. TEM measurements indicate that the burgers vector of misfit dislocations is a complete a(100). SACP, TEM, and TEM indicate that the film relaxation approximates the Matthews Blakeslee prediction. Even this was surprising in light of the layer by layer growth after relaxation since the type of dislocation that forms cannot glide to the interface to relieve the strain. Preliminary semiconductor - intermetallic - semiconductor structures have been grown. The quality of the interfaces is being assessed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 11, 1991
- Accession Number
- ADA237798
Entities
People
- P. I. Cohen
Organizations
- University of Minnesota