A Study of Copper Segregation in Sputtered Al-Si-Cu Films Using Auger Electron Spectroscopy

Abstract

A study has been made, using Auger Electron Spectroscopy (AES), of copper copper segregation in Aluminium Silicon Copper films processed in the Silicon Processing and Evaluation Laboratory (SPEL). The AES technique and its interpretation are briefly discussed. A description of the Auger Spectrometer and experimental details are also provided. The effects of variations in layer thickness and annealing temperatures on the interface between the Al-Si-Cu and the silicon substrate were studied. Results obtained from other samples from British Telecom research laboratories, and alternative analysis methods such as Rutherford Backscattering (RBS) are also discussed and conclusions drawn as to the nature of this segregation.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1991
Accession Number
ADA238130

Entities

People

  • D. C. Rodway
  • M. A. Green

Organizations

  • Royal Signals and Radar Establishment

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Base Pressure
  • Electron Beams
  • Electron Energy
  • Electron Spectroscopy
  • Electrons
  • Elements
  • Etching
  • Films
  • Materials
  • Measurement
  • Metal Oxides
  • Metals
  • Oxides
  • Spectra
  • Spectroscopy

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene