Semiconductor Deposition and Etching Interactions of Laser-Generated Translationally Hot Atoms and Radicals
Abstract
The goal in the work has been to investigate the microscopic basis for materials removal using neutral atoms and radicals at high kinetic energies (1-10 eV). With support from this ARO grant, it was possible to develop and characterize a new beam source of translationally fast atoms, radicals, and molecules. This beam source is based on a laser vaporization technique. The mechanisms of laser vaporization have been pioneered by many groups in the past several years; the method can be used to produce a variety of reactive neutral atoms, radicals, metal vapors, and other compounds with high kinetic energies. In this work, the laser vaporization process is used to produce a beam source of energetic, reactive neutral species which can be used to study collisions with semiconductor surfaces for fundamental investigations of etching and deposition.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1991
- Accession Number
- ADA238198
Entities
People
- Stephen R. Leone
Organizations
- University of Colorado Boulder