Atomic Approaches to Defect Thermochemistry
Abstract
The goal of the research program described herein was to apply atomistic thermodynamic theory, Monte Carlo simulation, and experimental analysis to elucidate the identity of point defects in semiconductors as well as to understand their static and dynamic properties. Significant progress has been made in the following nine areas: (1) Direct simulation of atomic diffusion including the effects of realistic boundary conditions, carrier injection and mis-fit strain, (2) Independent measurement of vacancy concentration and diffusivity, (3) Effects of temperature and strain on band offsets and atomic diffusion, (4) Elimination of DX centers from AlGaAs by optically stimulated dislocation climb, (5) Proper analysis of the capacitance-transient due to multiple carrier emission from a highly compensating deep level, (6) C-V analysis and SPICE modeling of ACTFEL devices, (7) DX in AlGaAs, (8) Statistical thermodynamics of ballistic hopping, and (9) Energetics of self-diffusion in GaAs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 15, 1991
- Accession Number
- ADA238260
Entities
People
- James A. Van Vechten
- John F. Wager
Organizations
- Oregon State University