Quantitative RHEED Studies of MBE Growth of 3-5 Compounds

Abstract

The objectives of this work have been to develop methods for extracting quantitative information from the Reflection High Energy Electron Diffraction (RHEED) pattern about the surface structure of nearly perfect crystals prepared by Molecular Beam Epitaxy (MBE) and to use these techniques to explore in detail the growth of homo-and heteroepitaxial structures involving GaAs, A1As, InAs, and related ternary compounds. The overall problem addressed is the development of highly controlled growth of multilayers, quantum wells, delta doping, Bragg reflectors, and other structures which can then be exploited in advanced electronic and photonic devices.

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Document Details

Document Type
Technical Report
Publication Date
Jun 03, 1991
Accession Number
ADA238350

Entities

People

  • Ben G. Streetman

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystals
  • Electrical Properties
  • Electron Diffraction
  • Electronics Laboratories
  • Heterojunctions
  • Low Temperature
  • Mirrors
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Phenomena
  • Optical Properties
  • Quantum Wells
  • Reflectors
  • Semiconductors
  • Solar Cells
  • Surface Emitting Lasers

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Quantum Computing