Quantum Devices and Structures Using Si-Based Molecular Beam Epitaxy

Abstract

The final report describes the technical tasks and accomplishments for 'Quantum Devices and Structures using Si Molecular Beam Epitaxy'. Research findings are summarized in five scientific areas, (a) study of strain in SiGe layers by reflection high energy electron diffraction (RHEED), (b) Silicide/Si quantum well structures, (c) development of theory and design for superlattice device, (d) miniband conduction in SiGe/Si superlattices, and (e) intersubband infrared absorption between valence minibands of symmetrically strained SiGe/Si superlattices.

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Document Details

Document Type
Technical Report
Publication Date
May 15, 1991
Accession Number
ADA238374

Entities

People

  • K. L. Wang

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Reactions
  • Crystal Lattice Vibrations
  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Laser Applications
  • Mass Spectrometry
  • Measurement
  • Power Electronics
  • Quantum Wells
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Spectra
  • Spectroscopy
  • Tunnel Diodes

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Quantum Computing