Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization

Abstract

As the first step in the chemically-controlled atomic layer epitaxy (ALE) of SiC, research has been conducted regarding the ALE of Si. Good quality single crystal epitaxial films of Si on off-axis (100) Si have been produced in the Davis group. Equipment related to the deposition of high-quality Si only is virtually completed in the Bedair group. Dichlorosilane has been used (or is being considered) by both groups. A deposition system that will achieve ALE of CeO2 on Si has also been designed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1991
Accession Number
ADA238506

Entities

People

  • Robert F Davis
  • Salah Bedair

Organizations

  • North Carolina State University

Tags

DTIC Thesaurus Topics

  • Atomic Layer Epitaxy
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Crystal Growth
  • Crystallography
  • Crystals
  • Electronics
  • Epitaxial Growth
  • Films
  • Materials
  • Materials Science
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Single Crystals
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.