Pseudomorphic Semiconducting Heterostructures from Combinations of AlN, GaN and Selected SiC Polytypes: Theoretical Advancement and Its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development
Abstract
The initial stages of growth of AIN and GaN on the Si (0001) face of alpha(6H0-SiC and the (0001) face of sapphire have been studied. The growth of both nitrides on the alpha(6H)-SiC substrates occurred on a thin of Si3N4. No significant surface chemical changes were observed when the films were grown on sapphire. The deposition of GaN on sapphire appeared to follow a Stranski- Krastanov mode of growth that on SiC showed characteristics of three-dimensional growth-possibly due to the Si3N4. The AIN grew on both substrates either layer- by-layer or, more likely, by the Stranski-Krastanov mode. The gas-source MBE for the growth of SiC-AIN-GaN heterostructures has been commissioned. Growth of single crystal (100) Beta-SiC on 3 degrees off axis Si(100) substrates at 1075 C has been successful. Two classes of computer codes have also been developed for theoretical modeling of pseudomorphic heterostructures of complex systems.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1991
- Accession Number
- ADA238520
Entities
People
- Larry Rowland
- Robert F Davis
- W. H. Braun
- Zlatko Sitar Max
Organizations
- North Carolina State University