InP and InGaAs Submicron Gate Microwave Power Transistors for 20 GHz Applications
Abstract
In GaAs MISFETs with 0.7 micron gate lengths and 0.2 mm gate widths have demonstrated an output power density of 0.92 W/mm at 18 GHz with a corresponding power gain and power-added efficiency of 3.2 dB and 29%, respectively. At 20 GHz, an output power density of 0.79 W/mm was obtained with a corresponding gain and power-added efficiency of 3.0 dB and 23%, respectively.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1991
- Accession Number
- ADA238595
Entities
People
- G. A. Johnson
- M. D. Biendender
- V. J. Kapoor