Optics with Semiconductors: Ultrafast Physics for Devices
Abstract
Femtosecond optical pulses have been used to study ultrafast phenomena in semiconductors that may be useful for future high-bit rate optoelectric and photonic devices. A complete characterization of femtosecond pulse formation in a dye laser has been performed. Several experiments have been performed in different semiconductors with emphasis on nonlinearities near the band edge in Gallium arsenide. We find large refractive and adsorptive nonlinearities near the band edge, which are due to many-body hot-carrier effects. Other materials which we have tested, such as crystalline or amorphous silicon, appear less promising for device applications. Waveguide switches and spatial light deflectors using the AC Stark effect nonlinearity have also been analyzed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1991
- Accession Number
- ADA238668
Entities
People
- P. M. Fauchet
Organizations
- Princeton University