Design and Development of Low Noise, High Speed High Electron Mobility Transistors

Abstract

This report summarizes work performed under contract DAAL03-90-C-0021. Under this study the moments of the Boltzmann Transport Equation were applied to investigate the performance of HEMT. The results of the simulations are compared to experimental measurements for a related device structure. Numerical solutions of quantum Liouville equation were also introduced to investigate transport perpendicular to the conducting channel under the device contacts to provide insight as to how carriers enter the 2-D electron gas. The goals of this Phase I study were to demonstrate that the cost of fabricating low noise transistors could be reduced by using numerical simulation during the early stage of design. The study was successful.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1991
Accession Number
ADA238750

Entities

People

  • B. J. Morrison
  • H. L. Grubin
  • J. P. Kreskovsky
  • T. R. Govindan

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Boltzmann Equation
  • Capacitance
  • Charge Density
  • Electrical Properties
  • Electron Mobility
  • Energy Bands
  • Fabrication
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Metal-Semiconductor Junctions
  • Potential Energy
  • Scattering
  • Scientific Research
  • Stratified Fluids
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Calculus or Mathematical Analysis
  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing