Growth Studies of CVD-MBE by In-Situ Diagnostics
Abstract
This is a progress report for the second year of the DARPA - URI program Growth Studies of CVD-MBE by in-situ Diagnostics. The goals of the program are to develop non-invasive, real time epitaxial growth monitoring techniques and combine them to gain an understanding of processes that occur during MBE growth from gas sources. We have adapted these techniques to a commercially designed gas source MBE system (Vacuum Generators Inc.) to facilitate technology transfer out of the laboratory into industrial environments. The in-situ measurement techniques of spectroscopic ellipsometry (SE) and laser induced fluorescence (LIF) have been successfully implemented to monitor the optical and chemical properties of the growing epitaxial film and the gas phase reactants. The temperature dependence of group III and V desorption from Galium arsenide and InP has been measured as well as the incident effusion cell fluxes. The temporal evolution of the growth has also been measured both by SE and LIF to show the smoothing of heterojunction surfaces during growth interruption.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 25, 1991
- Accession Number
- ADA238956
Entities
People
- George N. Maracas
- Timothy C Steimle
Organizations
- Arizona State University