Innovative Optoelectronic Materials and Structures Using OMVPE
Abstract
The materials investigations in this program have contributed to extending the wavelength range of high power diode lasers and to the development of improved Organometallic Vapor Phase Epitaxy processes. The main research thrusts are OMVPE growth of wide bandgap alloys, and in-situ processes during OMVPE. Growth of large bandgap III-V phosphide alloys was developed for optoelectronic applications including red semiconductor lasers. The lattice matched materials system Aluminum Gallium Indium Phosphide/Gallium Arsenide resulted in high power, low threshold single quantum well lasers wavelength = 655 nm). A materials investigation of a potentially shorter wavelength system, pseudomorphic Gallium Indium Phosphide/Aluminum Gallium Phosphide-Gallium Phosphide, was initiated. Conventional growth was unsuccessful as the In containing alloys do not remain stable during high temperature growth of Aluminum Gallium Phosphide. A multichamber OMVPE process employing flow modulation techniques was planned to overcome this problem. The phonon frequency shifts due to lattice expansion were measured and a temperature-tuned resonance was observed on GaAs at 600 C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 09, 1991
- Accession Number
- ADA239518
Entities
People
- James R. Shealy
Organizations
- Cornell University