Limited Reaction Processing for Semiconductor Materials Preparation

Abstract

Limited Reaction Processing (LRP) is a layer deposition technique based upon a combination of rapid thermal processing (RTP) and chemical vapor deposition. Under this contract, the versatility of LRP has been demonstrated in research on epitaxial growth in three different materials systems. This work has spurred research at several other laboratories in the area of epitaxial growth and applications involving RTP techniques, particularly in the Si1-xGex materials system. We have fabricated the first CVD-grown Si/Si1-xGex heterojunction bipolar transistors using this technique, with maximum oscillation frequencies on the order of 40 GHz. In the III-V area, we have explored arsine alternative sources for GaAs expitaxy which greatly improve the safety of MOCVD. We have also developed a new atomic layer growth technique by combining LRP with an alternating gas pulse method.

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Document Details

Document Type
Technical Report
Publication Date
Jul 26, 1991
Accession Number
ADA239639

Entities

People

  • J. L. Hoyt

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Electronics Laboratories
  • Epitaxial Growth
  • Fabrication
  • Films
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Materials
  • Military Research
  • Modules (Electronics)
  • Semiconductor Devices
  • Semiconductors
  • Thermal Stability
  • Transistors
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene