Molecular Beam Epitaxy 1990: Proceedings of the International Conference on Molecular Beam Epitaxy (6th) Held in La Jolla, California on 27-31 August 1990.

Abstract

This issue of the Journal of Crystal Growth contains the papers presented at the Sixth International Conference on Molecular Beam Epitaxy (MBE- VI). The scope of the conference covered the entire spectrum of MBE technology, from material aspects of growth, characterization, to physics and devices. Topics included growth kinetics, doping, migration-enhanced epitaxy, reflection, high-energy-electron diffraction, quantum wells and wire, gas-source MVE, MOMBE, CBE, and structures based on gallium arsenides, indium phosphides, II-VI compounds, antimonides, superconductors, magnetic materials, etc.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1991
Accession Number
ADA239732

Entities

People

  • C. W. Tu
  • J. S. Harris Jr.

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Ground and Sea Platforms
  • Space

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Crystal Lattice Vibrations
  • Crystal Structure
  • Crystals
  • Electronics Industry
  • Electronics Laboratories
  • High Electron Mobility Transistors
  • Materials Science
  • Measurement
  • Modules (Electronics)
  • Optical Properties
  • Optics
  • Power Electronics
  • Quantum Wells
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing