OMVPE Growth of InAsSbBi and Related Alloys Using New Organometallic Group V Sources.

Abstract

The major goal of the project is the organometallic vapor phase epitaxial (OMVPE) growth of a new III/V. The alloy is metastable, but under the correct growth conditions we expect to be able to grow it by OMVPE. This apparently requires low growth temperatures of 250-350 C. Thus, new organometallic As and Sb precursors are being developed which pyrolyze at lower temperature than AsH3 and TMSb, the normal group V sources. In addition, Bi precursors must be synthesized.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1991
Accession Number
ADA239939

Entities

People

  • G. B. Stringfellow

Organizations

  • University of Utah

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Chemistry
  • Crystal Growth
  • Crystals
  • Electronic Materials
  • Electrons
  • Energy Bands
  • Engineering
  • Epitaxial Growth
  • Low Temperature
  • Materials
  • Materials Science
  • Phase
  • Semiconductor Physics
  • Semiconductors
  • Solid State Physics
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Organic Chemistry
  • Semiconductor Device Technology