UPS, XPS, and HREELS Characterization of Trimethyl Indium Adsorbed on Si(110)
Abstract
In the past decade, organometallic chemical vapor deposition (OMCVD) of III-V compound semiconductors has experience explosive growth; one such system having applications in optoelectronic and microwave devices is Indium Phosphide. The actual reaction mechanisms controlling the deposition process is reported. Trimethylindium (TMIn), is a common organometallic precursor in InP OMCVD, on Si(110) substrates. The techniques of (Ultraviolet Photoelectron Spectroscopy), (X Ray Photoelectron Spectroscopy), (High Resolution Electron Energy Loss Spectroscopy), and Resonance Enhanced Multiphoton Ionization are utilized to investigate the thermal decomposition of Trimethylindium (TMIn) or silicon substrates under various surface coverage conditions. In the 140-1100 K temperature range, three regions of varying characteristics are found. Below 630 K, TMIn adsorbs molecularly with little further reaction on the substrate. In the 630-890 K region, the decomposition of adsorbed TMIn appears to take place. The presence of CHx(ad) (x<or=3), silicon-hydrogen, and silicon-carbon species on the surface are confirmed by UPS and/or HREELS. XPS shows a steady shift to lower binding energies for the C1s photoelectrons and UPS shows a see-saw-like shifting for the In 4d photoelectrons, first to lower then to higher binding energies. REMPI/MS measurements provide evidence for the steady-state desorption of methyl radicals in this thermal region. Above 890K, it appears that a thermally more complex process persist whereby In desorbs and C is deposited onto the surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1991
- Accession Number
- ADA239971
Entities
People
- David W. Shinn
- Jason S. Chu
- Lin Ming-chang
- Yue Bu
Organizations
- Emory University