Photoreflectance and H2O Adsorption on GaAs(100)

Abstract

Compound semiconductors possess the essential characteristics for the next technologically advanced generation of the semiconductor industry. Gallium arsenide (GaAs) in particular demonstrates considerable promise in the development of twenty-first century ultrahigh-speed computers, microwave generation and optical transmission. The unique properties of GaAs in comparison to silicon, the current mainstay of the electronic industry, are its enhanced optical properties and considerably higher electron velocity, which provide intrinsically higher speeds, greater operating frequencies, lower power requirements, higher resistance to high-energy radiation and dramatic optoelectronic capabilities. The enhanced performance of GaAs makes it an essential component for certain aspects of future commercial and military electronic systems. However, as with any new material, manufacturing technologies for compound semiconductors are still in their early stages of development.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1991
Accession Number
ADA240391

Entities

People

  • William F. Buechter

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Charge Carriers
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Computer Programs
  • Computers
  • Conduction Bands
  • Energy Bands
  • Materials
  • Measurement
  • Optical Properties
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics