Temperature Dependence of the UPS and HREELS of HN3 and DN3 on Si(110).
Abstract
Nitridation of semiconductor surfaces, particularly that of silicon is an important microelectronic fabrication process. It is also relevant to the preparation of Group III - metal nitrides, such as GaN and InN; they are potential high band-gap semiconductors. Different groups have conducted various investigations on the interaction of nitrogen-containing species with silicon single crystal surfaces. Most of these studies have shown that in the temperature range between 600 to 800 K, a planar or deformed planar structure of Si3N was formed on the surface. At higher temperature the Si3N structure converted into Si3N4 on the silicon surface. In our continuing search for more facile and clean N-sources, we have recently studied the adsorption of hydrazoic acid (HN3) on a Si(110) single crystal surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1991
- Accession Number
- ADA240793
Entities
People
- Jason C. Chu
- Lin Ming-chang
- Yue Bu
Organizations
- Emory University