Prevention of Single Event Upsets in Microelectronics

Abstract

Experimental and analytical studies of basic single-event radiation effects, single-event upset (SEU) modelling, and single-event upset hardening were performed. The effects of total-dose and proton environments on SEU responses are presented and quantified. Improved modelling and hardening techniques for SEU and GaAs and bipolar SRAMs are also presented. Techniques for SEU reduction in circuits, including a novel decoupling resistor structure, were evaluated.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1991
Accession Number
ADA241027

Entities

People

  • B. L. Bhuva
  • J. R. Hauser
  • L. W. Massengill
  • S. E. Kerns
  • T. R. Weatherford

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Algorithms
  • Bipolar Junction Transistors
  • Computer Programs
  • Databases
  • Digital Circuits
  • Electronics Industry
  • Electronics Laboratories
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Integrated Circuits
  • Modules (Electronics)
  • Power Electronics
  • Radiation Effects
  • Reliability
  • Semiconductor Devices
  • Semiconductors
  • Statistical Analysis

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics