Theoretical and Experimental Investigation of Heterojunction Interfaces

Abstract

Heterojunction energy-band discontinuities afford the device designer additional control over electron and hole transport near p-n junctions. Heterojunctions have been employed to realize new types of solid-state electron devices with properties not available from homojunction based technology. We have developed an experimental technique, based on the use of x-ray photoelectron spectroscopy (XPS), that enables us to measure band offsets to a precision of + or - 0.04 eV and to measure changes in band offsets to a precision of + or -0.01 eV. With the aid of this powerful experimental approach, we have been able to uncover much new heterojunction physics including crystallographic orientation dependence of band offsets, growth sequence variation, nontransitivity and time dependent shifts in band offsets.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1991
Accession Number
ADA241243

Entities

People

  • C. W. Farley
  • Edgar A. Kraut
  • J. R. Waldrop
  • R. W. Grant
  • Steven P. Kowalczyk
  • Walter A. Harrision

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accuracy
  • Band Gaps
  • Band Structures
  • Band Theory Of Solids
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Data Analysis
  • Distortion
  • Energy Bands
  • Heat Of Solution
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics