Work Development and Application of Advanced Methods in Electronic Structure to Semiconductors
Abstract
Work so far falls into a number of groups: (1) continuation of the Schottky barrier studies; (2) work on early stages of Schottky barrier formation (with John Klepeis: (3) work on properties of SiC with Walter Lambrecht and Ben Segall at Case; (4) general development of the methods, most particularly the ultimate electronic structure program that I've design together with Michael Methfessel in Berlin; (5) current projects, and plans for the near future.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 13, 1991
- Accession Number
- ADA241253
Entities
Organizations
- SRI International