Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors

Abstract

Heterojunction bipolar transistors have been characterized up to 40GHz. In addition to direct current-voltage and high frequency small signal measurements, power and harmonic characterization has been performed. The measurement results were fitted to a ten-element equivalent circuit model in which only three elements were allowed to vary with bias. This bias dependent model is accurate to within 2% over the entire bias range and is the first step toward a true large-signal model. The power and harmonic characteristics of the heterojunction bipolar transistor can also be accurately modeled with increasing number of both bias-dependent and fixed elements. Pulsed DC and thermal measurements have also been accomplished to determine the junction temperature and understand its effects on device characteristics.

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1991
Accession Number
ADA241461

Entities

People

  • C. J. Wei
  • D. S. Whitefield
  • James C. M. Hwang

Organizations

  • Lehigh University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Circuits
  • Compound Semiconductors
  • Direct Current
  • Electrical Engineering
  • Electronics Laboratories
  • Equivalent Circuits
  • Frequency
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Measurement
  • Modules (Electronics)
  • Power Electronics
  • Power Gain
  • Semiconductors
  • Test Equipment
  • Transistors

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Electronics Engineering
  • Regression Analysis.