Synthesis of Mismatched Heterojunction/Substrate Interfaces

Abstract

Strained layer InGaAs and InA1As structures have been grown by molecular beam epitaxy on lattice-mismatched GaAs substrates in order to examine various material properties which may be utilized advantageously for certain devices. The emphasis has been placed on the development of a heterojunction insulated-gate field effect transistor (HIGFET) using lattice-mismatched InGaAs and InA1 As layers to demonstrate the effective utilization and advantages of strained layers.

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Document Details

Document Type
Technical Report
Publication Date
Oct 11, 1991
Accession Number
ADA241845

Entities

People

  • H. H. Wieder

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Crystal Lattices
  • Crystal Structure
  • Dielectric Permittivity
  • Dielectrics
  • Electromagnetic Fields
  • Electron Density
  • Electron Microscopy
  • Electron Mobility
  • Energy Bands
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Measurement
  • Semiconductors
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics