Improved 320x244 - Element PtSi Schottky - Barrier IR-CCD Image Sensor

Abstract

This report describes the design, fabrication, and performance of an improved 320x 244-element IR-CCD imager with PtSi Schottky barrier detectors. The imager has 40mm x 40 mm pixels, and a 44% fill factor. Metal silicide photodiode array technology was invented at Rome Air Development Center (RADC) Hanscom AFB, MA, and has been under development there since the early 1970's. In 1973, Shepherd and Yang proposed silicide Schottky barrier detector (SBD) arrays for infrared thermal imaging. The objectives of the work described in the present report were to design and fabricate an improved version of the 320 x 244-element PtSi array using beneficial design and process changes inferred from test results on the TA13401B device. This report describes the design, fabrication, and performance of this array (TA14804A).

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1991
Accession Number
ADA242026

Entities

People

  • F. V. Shallcross
  • G. M. Meray
  • J. M. O'neill Iii
  • T. S. Villani
  • W. F. Kosonocky

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Arrays
  • Charge Coupled Devices
  • Charge Transfer
  • Construction
  • Contracts
  • Detectors
  • Electrons
  • Elements
  • Fabrication
  • Focal Plane Arrays
  • Focal Planes
  • Guard Rings
  • Metal-Semiconductor Junctions
  • Saturation
  • Standards

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Integrated Circuit Design and Technology.

Technology Areas

  • AI & ML
  • Directed Energy