Luminescence and Electroluminescence Properties of Nd, Tm, Yb Doped GaAs and Some II-VI Compounds
Abstract
This report describes the progress accomplished during the first year of research on luminescence and electroluminescence properties of Nd, Tm, Yb doped GaAs and some II-IV compounds. The photoluminescence study of GaAs:Yb shows no 4f emission. The PL spectra of CdS:Nd were recorded and about 20 sharp emission lines were observed. This indicates that in CdS, Nd3+ occupies different symmetry sites. The PL of CdS:Yb at 9.3 K reveals five sharp lines in the 985 nm - 990 nm range and a strong broader line at 998.3 nm. Electroluminescence of ZnS:Tm embedded in a Boric matrix was observed for the first time. Strong emission was observed at room temperature as well as at low temperature revealing only five groups of strong sharp lines which are assigned to transitions within the 4f shell of Tm3+. EL intensity was investigated as a function of voltage, temperature and frequency. The voltage dependence of the EL intensity shows that the direct impact excitation mechanism is a dominant one. Photoluminescence spectra of InP:Yb at different temperatures consist of sharp peaks related to Yb3+ transition.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 14, 1991
- Accession Number
- ADA242039
Entities
People
- Henry J. Lozykowski
Organizations
- Ohio University