Single Molecule Source Reagents for CVD of Beta Silicon Carbide
Abstract
Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting point. Use of silicon carbide thin films is hampered, however, by the inability to reproducibly grow stoichiometric films free from excess silicon or carbon. The principal difficulty is that absolutely reproducible flows of the source gases cannot be provided with existing gas flow control equipment. The very finest gas flow control equipment has been used in the CVD systems, but small disparities remain between successive deposited films. The production of practical beta silicon carbide devices has been hindered by the lack of a reproducible process for deposition of stoichiometric beta silicon carbide films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1991
- Accession Number
- ADA242106
Entities
People
- Duncan W. Brown