Epitaxial Growth and Electro-Optical Properties of Metal GaAs Superlattices

Abstract

The objective of this research program is to investigate the metal systems that are thermodynamically stable on Gallium arsenide. Moreover, for novel device applications, the metal films should be epitaxial on GaAs, and that means the lattice mismatch between metal and GaAs should be as small as possible. From this stable metal contacts, we can then explore new properties and physics of the metal/GaAs heterojunction. Furthermore, new metal quantum well and superlattice devices can be fabricated, and a new generation of detectors and devices with improved performance will emerge. The theoretical calculation of the metal quantum well (QW) photodetector has shown that the device can be served as a long wavelength (infrared) detector with an absorption efficiency one order of magnitude higher than a semiconductor QW device (e.g., AlGaAs/GaAs/AlGaAs. This enhancement is due to the higher oscillation strength of the metal intersubband transition.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1990
Accession Number
ADA242167

Entities

People

  • Kang L. Wang
  • R. Stanley Williams

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Stability
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electrical Properties
  • Energy Bands
  • Epitaxial Growth
  • Materials Science
  • Military Research
  • Optical Properties
  • Phase Diagrams
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing