An RF Performance Sensitivity and Process Yield Model for MIMIC CAD applications. MIMIC Program. Phase 3
Abstract
A physics based large-signal Gallium Arsenide MESFET model and circuit simulator has been developed to predict and optimize the yield of Gallium Arsenide MESFET designs before fabrication. Device acceptance criteria include both small- and large-signal RF operating characteristics such as small- signal gain, maximum power-added efficiency, and output power at 1dB gain compression. Channel doping details are described directly from processing specifications for material deposition, ion implantation, and implant annealing with the use of SUPREM 3.5, a process simulator developed at Stanford University. Monte Carlo techniques are used to estimate yield when disturbances in the MESFET parameters are modeled as multivariate Gaussian distributions. The yield estimator is integrated with an optimizer so that a design can be centered for maximum yield in the presence of process disturbances.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 16, 1991
- Accession Number
- ADA242266
Entities
People
- Carl Timothy Kelley
- D. E. Stoneking
- G. Bilbro
- P. Gilmore
- R. J. Trew
Organizations
- North Carolina State University