Progress Report on the Growth of ZnTe By Atmospheric Pressure Metal- Organic Vapour Phase Epitaxy (APMOCVD)

Abstract

The growth temperature and the VI/II gas phase ratio have been optimised for ZnTe epitaxy on GaAs by APMOCVD. These are: a Tg = 430 C and a VI/ II = 4. Material prepared under these conditions was found to be of high crystalline quality, comparable to the one obtained by MBE, and of high purity as demonstrated by the presence of the free exciton transition in low temperature PL spectra. Assuming the PL assignment is correct, the GaAs substrate and the organometallics are the main origins of layer contamination. Electrical properties are yet to be investigated and cannot be measured until reliable ohmic contacts can be made. The growth of ZnTe on GaSb substrates was not successful due to difficulties with pre-growth surface treatment of the substrate. A satisfying way of removing the oxide layer is being investigated.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1991
Accession Number
ADA242426

Entities

People

  • A. Boumaza
  • J. O. Williams

Organizations

  • University of Manchester

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Barometric Pressure
  • Chemistry
  • Compound Semiconductors
  • Contamination
  • Diffraction
  • Electrical Properties
  • High Temperature
  • Low Temperature
  • Materials
  • Metal-Semiconductor Junctions
  • Optical Properties
  • Semiconductors
  • Silicon Carbide
  • Spectra
  • Substrates
  • Surface Finishing
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene