An Oxygen Tracer Study of InP Oxidation

Abstract

The thermal oxidation process for InP results in a complex and process dependent oxide. From the observed self limiting behavior of the oxide growth, the rate limiting step is likely the diffusion of reaction species through the growing oxide film. O18 marker oxidation experiments with the resulting secondary ion mass spectroscopy (SIMS) depth profiles reveal that the oxidation takes place at the oxide surface by the outward migration of In and P, rather than at the oxide substrate interface. Based on the available results possible models for the oxidation are proposed.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1991
Accession Number
ADA242832

Entities

People

  • Eugene A. Irene
  • M. S. Denker
  • X. Liu

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Composition
  • Chemistry
  • Classification
  • Diagrams
  • Field Effect Transistors
  • Low Temperature
  • Mass Spectroscopy
  • Military Research
  • North Carolina
  • Optical Materials
  • Oxide Films
  • Oxides
  • Phase Diagrams
  • Security
  • Semiconductors
  • Tracer Studies
  • Universities

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Semiconductor Device Technology
  • Theoretical Analysis.