An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si-SiO2

Abstract

In this research we demonstrate an ellipsometry technique that is sensitive to the interfacial region between a dielectric film and substrate. Essentially, a film and substrate is immersed in a liquid that index matches to the film, thereby optically removing the film from the measurement. In addition, the use of spectroscopic and multiple angles of incidence ellipsometry provides sufficient specification of the interface parameters which along with the enhanced sensitivity to the interface, enables the optical measurement of the interfacial properties. Theoretical and experimental verification is provided along with application to the Si-SiO2 interface.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1991
Accession Number
ADA242867

Entities

People

  • Eugene A. Irene
  • V. A. Yakovlev

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Analyzers
  • Angle Of Incidence
  • Carbon Tetrachloride
  • Chemical Compounds
  • Chemistry
  • Classification
  • Ellipsometers
  • Films
  • Materials Science
  • Measurement
  • North Carolina
  • Optical Materials
  • Optical Properties
  • Refraction
  • Refractive Index
  • Thin Films
  • United States

Fields of Study

  • Physics

Readers

  • Nanofabrication and Microfabrication.