An Kinetics Study of the Electron Cyclotron Resonance Plasma Oxidation of Silicon
Abstract
The electron cyclotron resonance plasma oxidation of Silicon was investigated using in-situ during process static spectroscopic ellipsometry and dynamic real time ellipsometry at oxidation temperatures between 80 C and 400 C and at various applied bias. Successful optical modeling of the ellipsometric data was accomplished using a two layer model, in which the top layer is a pure silicon dioxide film over an interface layer. The kinetics results are compatible with the Cabrera-Mott theory for the oxidation by charged species in the limit of low electric field. The effect of applied bias suggests that the oxidizing species is O-. The energy activation is 0.18 eV, substantially lower than the thermal oxidation value.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1991
- Accession Number
- ADA242868
Entities
People
- Eugene A. Irene
- J. Joseph
- Y. Z. Hu
Organizations
- University of North Carolina at Chapel Hill