Pseudomorphic Narrow Gap Materials for High Performance Devices
Abstract
Indium Arsenide field effect transistors (1 micron gate lengths) have been fabricated and showed extrinsic (intrinsic) transconductance as high as 414 mS/mm (670mS/mm). The cut-off frequency is estimated to be more than a factor of two greater than is typical for GaAs based FET's with comparable gate length. The FET has also been operated at electric fields greater than 20 kV/cm without any indication of breakdown, far above the bulk breakdown value of 6 kV/cm. Several mechanisms have been proposed to explain this phenomenon. The threshold current densities of separate confinement strained A1GaAs/GaAs/InGaAs lasers have been shown to insensitive to the quality of the Aluminum Gallium Arsenide outer cladding layers due to the use of a thick GaAs inner cladding layer. We have also shown theoretically that (1) infrared absorption at normal incidence due to intervalence subband transition can be greatly enhanced in light-hole and heavy-hole inverted strained GaInAs/AIInAs quantum wells, and (2) with biaxial tensile strain, exciton absorption and saturation limit in quantum wells can be enhanced. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 18, 1991
- Accession Number
- ADA243148
Entities
People
- Wen I. Wang
Organizations
- Columbia University