Innovative Optoelectronic Materials and Structures Using OMVPE
Abstract
An advanced OMVPE process is being developed for the deposition of III-V semiconductor materials and structures. There are important optoelectronic device structures which can not be realized by conventional means. These include A1GaAs semiconductor lasers with improved coherence using embedded diffraction gratings, and GaInP pseudomorphic structures on GaP substrates for short wavelength semiconductor lasers. The structure on GaP result in improved laser performance compared to the 650 nm A1GaInP devices previously developed in this program. The new OMVPE apparatus combines the multichamber reaction cell with deep UV photo-assisted growth and modulation flow epitaxial techniques. Using a combination of such processes, the growth temperature requirements for III-V alloys can be substantially reduced. Selective growth on a sub-micron scale will be attempted with in-situ interference holography. The materials and techniques developed in this research program will result in significant simplifications to the fabrication sequence required to realize complex integrated optoelectronic circuits.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 25, 1991
- Accession Number
- ADA243257
Entities
People
- James R. Shealy
Organizations
- Cornell University