Gate Drain Geometry Effect on the Current Voltage Characteristics of GaAs MESFETs

Abstract

We investigated the effect of gate-drain distance on gallium arsenide MESFET current-voltage characteristics. DC characteristics of several GaAs MESFETS are determined and compared to results from a computer implementation of a physically based, analytical model by Chang and Day. Their model is modified to account for the effect of longer gate-drain distance, and shows excellent agreement with measured I-V curves across the full range of device geometrics tested.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1991
Accession Number
ADA243430

Entities

People

  • Edward Cohen
  • Jon S. Schoenberg

Organizations

  • Rome Laboratory

Tags

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  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Amplifiers
  • Computer Programs
  • Computers
  • Diffusion Coefficient
  • Electric Fields
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  • Equations
  • Field Effect Transistors
  • Gallium Arsenides
  • Geometry
  • Measurement
  • Metals
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Solid State Electronics

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  • Aerospace Propulsion Engineering.
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  • Microelectronics