Reactions of GaX3 (X = BR, I) with As(SiMe3)3; Crystal Structures of I3Ga.As(SiMe3)3 and (I2GaAs(SiMe3)2)2

Abstract

Since our introduction in 1986 of the use of the silyl halide elimination reaction for forming the Gallium Arsenide bond, we have found it to be a versatile tool for the synthesis of interesting compounds. Using reagents of the general form RnAs(SiMe3)3-n and R'nGaX3-n (n = 0, 1, 2), a number of monomeric, dimeric, trimeric, and mixed bridge arsinogallanes have been prepared. However, some of the most basic chemical reactions in this series, viz. those between As(SiMe3)3 and GaX3, remained largely unexplored. Previously, we reported that reaction of GaX3 (X = Chlorine, Bromine) and As(SiMe3)3 in a 1:1 mole ratio yields products which, upon being heated with a cool flame, give microcrystalline GaAs. Others have shown that GaAs made in this way consists of particles small enough to be expected to exhibit quantum confinement effects.

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Document Details

Document Type
Technical Report
Publication Date
Dec 10, 1991
Accession Number
ADA243485

Entities

People

  • A. T. Mcphail
  • J. D. Johansen
  • R. L. Wells

Organizations

  • Duke University

Tags

Communities of Interest

  • Air Platforms
  • Weapons Technologies

DTIC Thesaurus Topics

  • Advanced Materials
  • Chemical Laboratories
  • Chemical Reactions
  • Chemistry
  • Crystal Structure
  • Crystals
  • Decomposition
  • Diffraction
  • Elimination
  • Elimination Reactions
  • High Vacuum
  • Low Temperature
  • Materials
  • Military Research
  • Optoelectronic Devices
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Chemistry

Readers

  • Organic Chemistry

Technology Areas

  • Microelectronics
  • Quantum Computing