Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN
Abstract
An atomic layer epitaxy deposition system configured for the growth of thin films of the III-V nitrides of Al, Ga and In has been designed, constructed and commissioned. The system allows the introduction of up to 16 gases without mixing. Self-terminating growth of crystalline GaN films has been achieved on single crystal wafers of (0001) alpha (6H)-SiC. Results of analyses via Auger spectroscopy, electron microscopy and electron diffraction are described. Deposition of AlN and GaN via gas-source MBE was also continued during this period. The principal emphasis concerned the initial stages of growth of both compounds on the substrates of (00001) alpha (6H)-SiC and (0001) sapphire, as determined using X-ray photoelectron spectroscopy. An initial layer of silicon nitride formed on the surface of SiC prior to the deposition of either nitride. The deposition of GaN on sapphire followed the Stranski- Krastanov mode of nucleation and growth, while on SiC, characteristics of three- dimensional growth were evident. By contrast, AlN grew initially in a layer-by- layer mode. Deposition of GaN on vicinal (100) beta-SiC during UV irradiation resulted in the formation of a new 4H polytype of this material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1991
- Accession Number
- ADA243524
Entities
People
- Robert F Davis
Organizations
- North Carolina State University