Calculations of Electron and Photon Transport between 1 MeV and 1 eV
Abstract
This report describes the development and implementation of numerical methods for the simulation and description of electron and photon transport in layered one-dimensional structures such as metallized semiconductors. The simulations described were used to calculate charge distributions and predict from 1 eV to 20 MeV. The scope of our work included: (1) discrete ordinates transport calculations and dose predictions for primary and secondary electrons and for bremsstrahlung photons in one-dimensional layered media; (2) Monte Carlo electron transport and dose calculations in one- and two- and three-dimensions; (3) implementation of electron-photon scattering theory in Monte Carlo and discrete ordinates simulation of low energy 8.9eV electron transport in SiO2.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1991
- Accession Number
- ADA243725
Entities
People
- Stanley Woolf