Lithographic Micropatterning of Polythiophene Thin-Films.
Abstract
Several semiconductor processing procedures that could be used to micropattern polythiophene thin-films were investigated. Using standard semiconductor lithographic processing procedures as a guide to what environments the polythiophene would be exposed to, a series of tests duplicating specific processing steps were devised. These tests determined that polythiophene could withstand heating on a hot plate to 150 C for 5 minutes, heating in a convection oven to 200 C for 30 minutes, and to 100 C for 1 hour without changing thin film thickness, index of refraction, surface morphology, or absorbance. Of the solvents polythiophene was exposed to, only isopropyl alcohol caused no film deformation. A reactive ion etching process using a low temperature silicate passivating and masking layer over the polythiophene is recommended for processing polythiophene. Using this procedure highly anisotropic structures were achieved using a 5 minute reactive ion etch with a chamber pressure of 50 mtorr, plasma power of 100 watts, and an oxygen flow rate of 50 standard cubic centimeters per minute.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1991
- Accession Number
- ADA243819
Entities
People
- Carl A. Kutsche
Organizations
- Air Force Institute of Technology