Photonic Technology Photonic Devices Research.

Abstract

The suitability of the inversion channel device structures for a photonic technology in an InP based materials technology was investigated. The A1 based and the P based heterosystem lattice matched to the InP substrate were evaluated. Both MBE and MOCVD were used and their relative merits were determined. CBE was investigated and ruled out due to its inability to incorporate the A1. The various members of the inversion channel family were demonstrated in the A1 system and the HFET and the DOES laser were found to be most compatible. HFETS were investigated in more detail and implantation was used optimally to adjust threshold voltage. Lasing was obtained in a hybrid A1/P combination and suggests that MOCVD with improved doping control may provide the necessary growth technique for the integrated 1.5 micron technology.

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1991
Accession Number
ADA243936

Entities

People

  • G. W. Taylor

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Implantation
  • Inversion
  • Materials
  • Photonic Devices

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Directed Energy